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1 of 11 optimum technology matching? applied gaas hbt ingap hbt gaas mesfet sige bicmos si bicmos sige hbt gaas phemt si cmos si bjt gan hemt functional block diagram rf micro devices?, rfmd?, optimum technology matching?, enabling wireless connectivity?, powerstar?, polaris? total radio? and ultimateblue? are trademarks of rfmd, llc. bluetooth is a trade- mark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks and registered tradem arks are the property of their respective owners. ?2012, rf micro devices, inc. product description 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . ordering information bifet hbt rf in pin 2,3 rf out / vds pin 6,7 gnd base vgs pin 1 rfha1006 225mhz to 1215mhz, 9w gan wideband power amplifier the rfha1006 is a wideband power amplifier designed for cw and pulsed applica- tions such as wireless infrastructure, radar, two way radios and general purpose amplification. using an advanced high power density gallium nitride (gan) semi- conductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier design. the rfha1006 is an input matched gan transistor packaged in an air cavity ceramic package which provides excellent therma l stability through the use of advanced heat sink and power dissipation technolo gies. ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. an exter- nal output match offers the flexibility of further optimizing power and efficiency for any sub-band within the overall bandwidth. features ? advanced gan hemt technology ? output power of 9w ? advanced heat-sink technology ? 225mhz to 1215mhz instantaneous bandwidth ? input internally matched to 50 ? ? 28v operation typical performance ? output power 39.5dbm ? gain 16db ? power added efficiency 60% ? -40c to 85c operating temperature ? large signal models available applications ? class ab operation for public mobile radio ? power amplifier stage for commercial wireless infrastructure ? general purpose tx amplification ? test instrumentation ? civilian and military radar ds120418 ? package: aln leadless chip carrier / so8 rfha1006 225mhz to 1215mhz, 9w gan wide- band power amplifier rfha1006s2 2-piece sample bag rfha1006sb 5-piece bag rfha1006sq 25-piece bag rfha1006sr 100 pieces on 7? short reel rfha1006tr7 750 pieces on 7? reel rfha1006pcba-410 fully assembled evaluation board 225mhz to 1215mhz; 28v operation
2 of 11 rfha1006 ds120418 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . absolute maximum ratings parameter rating unit drain voltage (v d )150v gate voltage (v g )-8 to +2v gate current (i g )10ma operational voltage 32 v rf- input power 30 dbm ruggedness (vswr) 12:1 storage temperature range -55 to +125 c operating temperature range (t l ) -40 to +85 c operating junction temperature (t j )200c human body model class 1a mttf (t j < 200c, 95% confidence limits)* 3 x 10 6 hours thermal resistance, r th (junction to case) measured at t c = 85c, dc bias only 6c/w * mttf - median time to failure for wear-out failure mode (30% i dss degradation) which is determined by the technology process reliability. refer to product qualification report for fit(random) failure rate. operation of this device beyond any one of these limits may ca use permanent damage. for reliable continuous operation, the devi ce voltage and current must not exceed the maximum operating values. bias conditions should also satisfy the following expression: p diss < (t j - t c )/r th j - c and t c = t case parameter specification unit condition min. typ. max. recommended operating conditions drain voltage (v dsq )2832v gate voltage (v gsq )-5-3-2v drain bias current 88 ma rf input power (p in )28dbm input source vswr 10:1 rf performance characteristics frequency range 225 1215 mhz small signal 3db bandwidth linear gain 16 db p out = 30dbm power gain 14 db p out = 39.5dbm gain flatness 3 db p out = 30dbm, 225mhz to 1215mhz gain variation with temperature -0.02 db/c input return loss (s 11 )-11db output power 39.5 dbm 225mhz to 1215mhz power added efficiency (pae) 60 % 225mhz to 1215mhz caution! esd sensitive device. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. ex tended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical perfor- mance or functional operation of the devi ce under absolute maximum rating condi- tions is not implied. the information in this publication is believed to be accurate and reliable. however, no responsibility is assumed by rf micro devices, inc. ("rfmd") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. rohs (restriction of hazardous subs tances): compliant per eu directive 2002/95/ec.
3 of 11 rfha1006 ds120418 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . rf functional tests [1], [2] v gs(q) -3.2 v gain 16.6 db p in = 10dbm, 300mhz power gain 14.8 15.4 db p in = 24dbm, 300mhz input return loss -10 db output power 39.4 dbm power added efficiency (pae) 55 62.5 % gain 15 db p in = 10dbm, 1100mhz power gain 14 14.5 db p in = 25dbm, 1100mhz input return loss -9 db output power 39.5 dbm power added efficiency (pae) 48 53 % [1] test conditions: v dsq = 28v, i dq = 88ma, cw, t = 25oc. [2] performance in a standard tuned test fixture. parameter specification unit condition min. typ. max.
4 of 11 rfha1006 ds120418 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . typical performance in standard fixed tuned test fixture matched for 225mhz to 1215mhz (t = 25c, unless noted) -18 -15 -12 -9 -6 -3 0 0 3 6 9 12 15 18 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 magnitude, s 11 , s 22 (db) magnitude, s 21 (db) frequency (mhz) small signal s-parameters versus frequency (v d = 28v, i dq = 88ma) s21 s11 s22 10 11 12 13 14 15 16 17 200 400 600 800 1000 1200 1400 gain (db) frequency (mhz) gain versus frequency, p in = 25dbm (cw , v d = 28v, i dq = 88ma) 85c 25c -40c 20 25 30 35 40 45 50 55 60 65 70 200 400 600 800 1000 1200 1400 power added e?ciency, pae (%) frequency (mhz) pae versus frequency, p in = 25dbm (cw, v d = 28v, i dq = 88ma) 85c 25c -40c -16 -14 -12 -10 -8 -6 200 400 600 800 1000 1200 1400 irl, input return loss (db) frequency (mhz) input return loss versus frequency, p in = 25dbm (cw, v d = 28v, i dq = 88ma) 85c 25c -40c -18 -15 -12 -9 -6 -3 0 0 3 6 9 12 15 18 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 input return loss (db) gain (db) frequency (mhz) gain/irl versus frequency, p out = 39.5dbm (cw, v d = 28v, i dq = 88ma) gain irl 30 35 40 45 50 55 60 65 70 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 power added e?ciency, pae (%) frequency (mhz) pae versus frequency, p out = 39.5dbm (cw, v d = 28v, i dq = 88ma)
5 of 11 rfha1006 ds120418 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . typical performance in standard fixed tuned test fixture matched for 225mhz to 1215mhz (t = 25c, unless noted) 0 4 8 12 16 20 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 gain (db) frequency (mhz) gain versus frequency (cw, v d = 28v, i dq = 88ma) pout =40dbm pout =39.5dbm pout =30dbm p out p out p out 0 10 20 30 40 50 60 70 80 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 power added e?ciency, pae (%) frequency (mhz) power added e?ciency versus frequency (cw, v d = 28v, i dq = 88ma) pout =40dbm pout =39.5dbm pout =30dbm p out p out p out -18 -15 -12 -9 -6 -3 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 input return loss, irl (db) frequency (mhz) input return loss versus frequency (cw, v d = 28v, i dq = 88ma) pout =40dbm pout =39.5dbm pout =30dbm p out p out p out 10 11 12 13 14 15 16 17 18 19 22 25 28 31 34 37 40 gain (db) p out , output power (dbm) gain versus output power (cw, v d = 28v, i dq = 88ma) freq=300mhz freq=800mhz freq=1100mhz 0 10 20 30 40 50 60 70 22 25 28 31 34 37 40 power added e?ciency, pae (%) p out , output power (dbm) power added e?ciency versus output power (cw, v d = 28v, i dq = 88ma) freq=300mhz freq=800mhz freq=1100mhz -18 -15 -12 -9 -6 -3 0 22 25 28 31 34 37 40 input return loss, irl (db) p out , output power (dbm) input return loss versus output power (cw, v d = 28v, i dq = 88ma) freq=300mhz freq=800mhz freq=1100mhz
6 of 11 rfha1006 ds120418 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . typical performance in standard fixed tuned test fixture matched for 225mhz to 1215mhz (t = 25c, unless noted) -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 0 0 1 0 1 1 imd3, intermodulaon distoron (dbc) pout, output power (w-pep) imd3 versus output power (2-tone 1mhz separaon, v d = 28v, i dq varied, f c = 1100mhz) 44ma 88ma 132ma 176ma 220ma 13 13.5 14 14.5 15 15.5 16 16.5 17 17.5 0 0 1 0 1 1 gain (db) pout, output power (w-pep) gain versus output power (2-tone 1mhz separaon, v d = 28v, i dq varied, f c = 1100mhz) 44ma 88ma 132ma 176ma 220ma
7 of 11 rfha1006 ds120418 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . package drawing (all dimensions in mm.) pin names and descriptions pin name description 1vgs gate dc bias pin 2rf in rf input 3rf in rf input 4n/c no connect 5n/c no connect 6rf out/vds rf output/drain dc bias pin 7rf out/vds rf output/drain dc bias pin 8n/c no connect backside gnd ground
8 of 11 rfha1006 ds120418 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . bias instruction for rfha1006 evaluation board esd sensitive material. please use proper esd precautions when handling device s of evaluation board. evaluation board requires additional external fan cooling. conne ct all supplies before powering evaluation board. 1. connect rf cables at rfin and rfout. 2. connect ground to the ground supply terminal, and ensure th at both the vg and vd grounds are also connected to this ground terminal. 3. apply -5v to vg. 4. apply 28v to vd. 5. increase v g until drain current reaches 88ma or desired bias point. 6. turn on the rf input. typical test data provided is measured to sma connector re ference plane, and include evaluation board / broadband bias network mismatch and losses.
9 of 11 rfha1006 ds120418 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . evaluation board schematic evaluation board bill of materials (bom) component value manufacturer part number c1, c2 2400pf dielectric labs inc c08bl242x-5un-x0 c11 10000pf murata electronics grm188r71h103ka01d c15 10 ? f murata electronics GRM21BF51C106ZE15L c20 3.3pf atc 100a3r3bw150xc c25 4.7 ? f murata electronics grm55er72a475ka01l r11 47nh murata electronics lqg11a47nj00 l20 3.85nh coilcraft 0906-4klb l21 82nh coilcraft 1008hq-82nxglc c21, r21 not used - -
10 of 11 rfha1006 ds120418 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . evaluation board layout device impedances frequency (mhz) rfha1006pcba-410 (225mhz to 1215mhz) z source ( ? ) z load ( ? ) 225mhz 40.4 + j3.4 40.6 + j14.1 300mhz 41.5 + j4.6 42.8 + j9.3 400mhz 42.8 + j5.5 42.7 + j5.8 950mhz 50.8 + j1.4 24.5 + j11.9 1100mhz 50.1 - j1.4 21.1 + j21.0 1215mhz 49 - j 2.8 19.8 + j27.6 note: device impedances reported are the measured evaluation boar d impedances chosen for a tradeoff of efficiency and peak powe r performance across the entire frequency bandwidth.
11 of 11 rfha1006 ds120418 7628 thorndike road, greensboro, nc 27409-9421 for sales or technical support, contact rfmd at (+1) 336-678-5570 or customerservice@rfmd.com . device handling/environmental conditions rfmd does not recommend operating this device with typical drai n voltage applied and the gate pinched off in a high humidity, high temperature environment. gan hemt devices are esd sensitive materials. please use pr oper esd precautions when handling devices or evaluation boards. dc bias the gan hemt device is a depletion mode high electron mobility transistor (hemt). at zero volts v gs the drain of the device is saturated and uncontrolled drain current will destroy the transist or. the gate voltage must be taken to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maxi - mum limits. rfmd recommends applying v gs = -5v before applying any v ds . rf power transistor performance capabilities are determined by the applied quiescent drain current. this drain current can be adjusted to trade off power, linearity, and efficiency charac teristics of the device. the recommended quiescent drain current (i dq ) shown in the rf typical performance table is chosen to best represent the operational charac teristics for this device, con- sidering manufacturing variations and expected performance. the user may choose alternate conditions for biasing this device based on performance tradeoffs. mounting and thermal considerations the thermal resistance provided as r th (junction to case) represents only the packag ed device thermal characteristics. this is measured using ir microscopy capturing the device under test te mperature at the hottest spot of the die. at the same time, the package temperature is measured using a thermocouple to uching the backside of the die embedded in the device heat sink but sized to prevent the measurement system from impact ing the results. knowing the dissipated power at the time of the measurement, the thermal resistance is calculated. in order to achieve the advertised mttf, proper heat removal must be considered to maintain the junction at or below the max- imum of 200c. proper thermal design includes consideration of ambient temperature and the thermal resistance from ambi- ent to the back of the package including heat sinking syst ems and air flow mechanisms. incorporating the dissipated dc power, it is possible to calculate the junction temperature of the device.

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